Accession Number:

ADA463604

Title:

Stress-Engineered Quantum Dots for Multispectral Infra-Red Detector Arrays

Descriptive Note:

Final technical rept. 1 Jul 2005-30 Jun 2006

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

• Madhukar, A.
• Konkar, A.
• Campbell, J. C.
• Chang, Y. C.
• Wang, W. I.

Report Date:

2006-06-30

Pagination or Media Count:

9.0

Abstract:

During the above-noted period of this Final Technical Report, the following salient milestones were reached 1 Introduced and demonstrated the concept of injecting electrons into the quantum dot OD active infra-red absorbing region from bracketing doped contact layers to suppress unwanted dark current leaving the QD region undoped 2 Introduced and demonstrated the benefits of the concepts of a strain-relieving OD capping layers, b current blocking layers, and c lateral potential confinement layer for tailoring the OD electronic response to the desired IR response 3 Demonstrated high performance ODIP devices in the mid and longwavelength IR regions 4 Demonstrated voltage-tunable mid and long IR dual wavelength ODIPs.

Descriptors:

• *SEMICONDUCTORS
• *INFRARED DETECTORS
• *QUANTUM DOTS
• *MOLECULAR BEAM EPITAXY
• ELECTRONICS
• LAYERS
• DOPING
• INDIUM ARSENIDES
• MULTISPECTRAL
• CAPPING
• CATHODOLUMINESCENCE
• ELECTRONS
• GALLIUM ARSENIDES
• ARRAYS

Subject Categories:

• Electrical and Electronic Equipment
• Infrared Detection and Detectors
• Crystallography
• Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE