Accession Number:

ADA463584

Title:

Phonon Enhancement of Electronic and Optoelectronic Devices

Descriptive Note:

Final technical rept. 1 Jul 2000-30 Jun 2006

Corporate Author:

BROWN UNIV PROVIDENCE RI DIV OF ENGINEERING

Report Date:

2006-12-01

Pagination or Media Count:

115.0

Abstract:

This MURI program began with the premise that extensive opportunities exist to transform the problems generally associated with phonons presenting an overhead into a distinct benefit for substantial enhancement of a broad range of optoelectronic and electronic devices. Our explicit goal and objective is to provide a significant improvement and major technological impact to the performance of a wide spectrum of advanced and novel semiconductor optoelectronicelectronic devices, by explicitly focusing on the role of phonon assisted and phonon dominated processes that control the functionality and applications of such devices. The devices range from quantum cascade and intersubband mid-IR lasers to new THz frequency laser sources, from semiconductor lasers in the blue and near ultraviolet to high power microwave PETs, to novel ultrahigh speed bipolar tunneling transistors. Additionally, new physical phenomena is being studied in which electron-electron interaction, crucial for ballistic and coherent electronic devices, is spectroscopically characterized via the electron-phonon interaction. The multi-university team was organized specifically to integrate a potent core of scientific expertise in phonon science, both experiment and theory in terms of the interaction of phonons with the electronic degrees of freedom in semiconductor nanostructures and high speed, high power devices.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Statistics and Probability
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE