Accession Number:

ADA463489

Title:

High Power Mid Wave Infrared Semiconductor Lasers

Descriptive Note:

Final rept. 15 Sep 2004-14 Jun 2006

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

2006-06-15

Pagination or Media Count:

16.0

Abstract:

This project identifies key challenges for the development of high-power electrically injected MWIR laser arrays using 111-V antimonide based materials. In this approach, InGaSb quantum wells are grown on metamorphic layers on a GaSb or GaAs substrate. Doping of these layers is extremely challenging. We have obtained activation energies for Te-doped and Be-doped InAlSb. Using a novel interlayer doping schemes, we have been able to fabricate high quality PIN diodes. We have also filed a provisional patent on semiconductor conducting layers. The license for this patent is presently being negotiated by the University tech transfer office with a small business firm in new mexico. We have also demonstrated room temperature photoluminescence up to 3 gm from InGaSb quantum wells grown on GaAs substrate. Using this approach we have fabricated optically pumped vertical cavity surface emitting lasers.

Subject Categories:

  • Lasers and Masers
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE