Studies on Ba(2)YNbO(6) Buffer Layers for Subsequent YBa(2)Cu(3)O(7-x) Film Growth
Journal article (postprint)
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH PROPULSION DIRECTORATE
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In this paper, we are reporting a dielectric oxide buffer Ba2YNbO6 BYNO and its performance on various substrates for a potential buffer layer for the growth of YBa2Cu3O7-x YBCO coated conductors. Ba2YNbO6 is a moderate dielectric. Using pulsed laser deposition, epitaxial BYNO films were grown at 850 degrees C with an oxygen pressure of 200 mTorr on single crystal MgO 100 substrate and ion beam assisted sputter deposited MgO buffered hastelloy metal substrates. The surface morphology of the BYNO films reveals out growths even though the average surface roughness is only 2-8 nm. The texture of BYNO films is 8 degrees and thickness of these layers 100 nm on metal substrates. Highly c-axis oriented YBCO films were deposited on BYNO buffered substrates. Critical transition temperatures Tc0 determined from electrical transport measurements vary between 88-89 K and corresponding critical current densities Jc ranging from 0.5-1 MAcmsquared at 77 K.
- Physical Chemistry
- Electricity and Magnetism