Accession Number:

ADA461512

Title:

Pulsed Laser Deposition of YBCO Coated Conductor Using Y(2)O(3) as the Seed and Cap Layer (Postprint)

Descriptive Note:

Journal article 10 Mar 2003-10 Mar 2004

Corporate Author:

AIR FORCE RESEARCH LAB EDWARDS AFB CA PROPULSION DIRECTORATE

Report Date:

2004-06-04

Pagination or Media Count:

8.0

Abstract:

Although a variety of buffer layers have been routinely reported, a standard architecture commonly used for the YBa2Cu3O7-x YBCO coated conductor is YBCOCeO2YSZCeO2substrate or YBCOCeO2YSZY2O3substrate where ceria is typically the cap layer. CeO2 is generally used as only a seed or cap layer since cracking within the film occurs in thicker CeO2 layers due to the stress of lattice mismatching. Y2O3 has been proposed as a seed and as a cap layer but usually not for both in a given architecture, especially with all layers deposited in situ. Yttrium oxide films grown on nickel by electron beam evaporation processes were found to be dense and crack free with good epitaxy. In this report, pulsed laser deposition PLD of Y2O3 is given where Y2O3 serves as both the seed and cap layer in the YBCO architecture. A comparison to PLD CeO2 is provided. Deposited layers of the YBCO coated conductor are also grown by laser ablation. Initial deposition resulted in specimens on textured Ni substrates with current densities of more than 1 MA cm-2 at 77 K, self-field.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE