Accession Number:

ADA461486

Title:

High Dielectric Constant Oxides for Advanced Micro-Electronic Applications

Descriptive Note:

Final rept. 23 Aug 2001-29 Nov 2006

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE CENTER FOR HIGH TECHNOLOGY MATERIALS

Personal Author(s):

Report Date:

2006-11-29

Pagination or Media Count:

22.0

Abstract:

A series of mixed oxide compounds have been manufactured and studied with a view to assessing their suitability for applications in advanced microelectronics ZrO2, Ta2O5, LaAlO3, Sm2O3, Pr2O3, Nd2O3, TiO2, TixSi1-xO2. Although each material has distinct advantages, particularly in terms of the magnitude of the dielectric constant, none of those studied can satisfy all of the requirements for thin films on Si. Consideration of the situation likely to arise under real technological conditions leads us to conclude that there are major issues still to be resolved, if indeed they can, if the goals outlined in the semiconductor roadmap for 2016 and beyond are to be attained.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE