Accession Number:

ADA461125

Title:

P-type SiGe/Si Superlattice Cooler

Descriptive Note:

Conference paper

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

2000-01-01

Pagination or Media Count:

6.0

Abstract:

The fabrication and characterization of single element p-type SiGeSi superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 m thick symmetrically strained Si0.7Ge0.3Si superlattice grown on a buffer layer designed so that the in-plane lattice constant is approximately that of relaxed Si0.9Ge0.1. Cooling up to 2.7 K at 25 C and 7.2 K at 150 C were measured. These p-type coolers can be combined with n-type devices that were demonstrated in our previous work. This is similar to conventional multi element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively small currents.

Subject Categories:

  • Electrical and Electronic Equipment
  • Air Conditioning, Heating, Lighting and Ventilating
  • Crystallography
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE