Accession Number:

ADA460567

Title:

X-Ray Irradiation Effects in Top Contact, Pentacene Based Field Effect Transistors for Space Related Applications

Descriptive Note:

Journal article

Corporate Author:

AIR FORCE RESEARCH LAB KIRTLAND AFB NM SPACE VEHICLES DIRECTORATE

Report Date:

2006-01-01

Pagination or Media Count:

4.0

Abstract:

Preliminary studies of the effect of x-ray irradiation, typically used to simulate radiation effects in space, on top contract, pentacene based field effect transistors have been carried out. Threshold voltage shifts in irradiated devices are consistent with positive charge trapping in the gate dielectric and a rebound effect is observed, independent of the sign of applied electric field during irradiation. Carrier mobility variations in positive electric field biasedirradiated devices are interpreted in terms of the effects of interface-state-like defects.

Subject Categories:

  • Organic Chemistry
  • Electrical and Electronic Equipment
  • Chemical, Biological and Radiological Warfare
  • Astronautics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE