Effect of O2 Partial Pressure on YBa2Cu3O7-delta Thin Film Growth by Pulsed Laser Deposition
Journal article (postprint)
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH PROPULSION DIRECTORATE
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YBa2Cu3O7-delta thin films were processed by pulsed laser deposition on 1 0 0 LaAlO3 substrates using O2 partial pressures from 120 to 1200 mTorr. The effect of O2 pressure on film properties, including room temperature resistivities and microstructures, was studied for a unique set of deposition parameters. The film quality was observed to remain high over a wide range of O2 partial pressures, with much less sensitivity to O2 pressure than previous studies which are compared. For O2 pressures from 200 to 1200 mTorr, superconducting transition temperatures consistently reached values 91.5 K and transport critical current densities were 3-5 MAsq cm 77 K, self-field. It is proposed that less sensitivity of film properties to O2 pressure is achieved by 1 reducing the particle velocity of the plume below a critical threshold, and 2 using a deposition temperature of 785 degrees C for adequate surface activation.
- Physical Chemistry
- Lasers and Masers