Sub-100 muA Current Operation of Strained InGaAs Quantum Well Lasers at Low TemperaturesL.
CALIFORNIA INST OF TECH PASADENA T J WATSON LABS OF APPLIED PHYSICS
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Very low threshold currents 100 muA have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 muA and external quantum efficiency 1 mWmA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures 100 K in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance
- Lasers and Masers
- Quantum Theory and Relativity