GHz Modulation of GaAs-Based Bipolar Cascade VCSELs (Preprint)
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE
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The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for 2-stage and 9.4 GHz for 3-stage devices in response to small-signal current injection at an operating temperature of -50 C.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Lasers and Masers