Accession Number:

ADA459599

Title:

Physics and Fabrication of Quasi-One-Dimensional Conductors

Descriptive Note:

Doctoral thesis

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Personal Author(s):

Report Date:

1993-04-01

Pagination or Media Count:

136.0

Abstract:

To facilitate research in Quantum Effect Electronics QEE it is necessary that a reliable fabrication technology be developed to maximize the likelihood that a particular device will exhibit observable quantum effects. By having a controlled process, it becomes possible to fabricate more demanding structures, and to experimentally explore new areas of device physics. In this thesis, the fabrication technology developed for the fabrication of quasi-one-dimensional Q1D conductors in the GaAsMGaAs system using x-ray lithography will be described, including modeling tools that have been developed to better understand some critical process steps. In addition, results will be analyzed with respect to simple theories that have been proposed over the past several years to describe such devices. These Q1D conductors are harnessed in a new type of Q1D planar resonant tunneling transistor Q1D-PRESTFET with one-dimensional emitter and collector, that is predicted to exhibit very strong resonances in electron transport.

Subject Categories:

  • Nuclear Physics and Elementary Particle Physics
  • Quantum Theory and Relativity
  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE