Accession Number:

ADA459250

Title:

Model of High-Energy-Density Battery Based on SiC Schottky Diodes

Descriptive Note:

Progress rept. Jan-Jul 2006

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2006-10-01

Pagination or Media Count:

20.0

Abstract:

Silicon carbide SiC diodes are being investigated as direct energy converters DECs for use in small, long-lived nuclear power sources for unattended sensors. Voltage and current measurements on Schottky diodes fabricated from both Si and SiC result in typical efficiencies of 5 to 15. A drift-diffusion model has been developed to predict the output and to help us better understand the radiation-induced current that results. This report describes the initial conditions, the drift-diffusion algorithm, and the material parameters used in the model. The results of the model compare well to experimental data.

Subject Categories:

  • Energy Storage
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE