Accession Number:

ADA458623

Title:

1570V, 14A 4H-SiC Bipolar Darlington with a High Current Gain of Beta>462

Descriptive Note:

Conference paper

Corporate Author:

ARMY TANK-AUTOMOTIVE COMMAND WARREN MI

Report Date:

2003-01-01

Pagination or Media Count:

4.0

Abstract:

This paper reports the design, fabrication and characterization of a 4H-SiC bipolar Darlington with both high DC common emitter current gain and high voltage. The driving and output transistors are designed and fabricated on the same chip with a 12um, 8.5x1015cm-3 doped drift layer and a 1 um 4.1x1017cm-3 doped p base. The Darlingtons drive transistor is capable of 1,600V and 5A with a maximum current gain betasub 1 over 25 at a collector current density Jsub C1250Acm2 with a specific on-resistance RSPON of 12.2mOhmscm2. The output transistor can handle over 23A and a blocking voltage higher than 1600V with a peak current gain betasub 222 at Jsub C2261Acm2 and an RSPON of 13.4mOhmscm2. The Darlingtons DC current gain at room temperature is found to increase with the collector current, up to 462 at IsubC213.9A 232Acm2, limited by the measurement instrument. The Darlington can block voltages up to 1571V, conduct an Isub C14A at Vsub F7.5V and provide a differential RSPON of 16.7mOhmscm2 at Jsub C2 up to over 240 Acm2. Temperature-dependent I-V characteristics will be presented for the driving and output transistors. DC common emitter current gains will also be reported for the driving and output transistors as well as the Darlington.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE