Accession Number:

ADA458321

Title:

Isotope Generated Electron Density in Silicon Carbide Direct Energy Converters

Descriptive Note:

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

2006-10-01

Pagination or Media Count:

22.0

Abstract:

SiC has been investigated for use as a direct energy converter DEC for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code MCNPX to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta average 125 keV generates on the order of 27k free electronscc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device.

Subject Categories:

  • Isotopes
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE