Accession Number:

ADA458317

Title:

Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor

Descriptive Note:

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

2006-11-01

Pagination or Media Count:

28.0

Abstract:

The incremental capacitance C was measured for a silicon carbide SiC Schottky diode during a reverse-biasing pulse and for two SiC n-MOS transistors during a negative pulse to their source with the drain grounded. C was measured as a function of pulsed voltage to 600 V, and on a gain-phase analyzer as a function of frequency and bias voltage to 40 V.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE