Investigation of Lattice and Thermal Stress in GaN/A1GaN Field-Effect Transistors
Technical progress rept. 1 Jul-30 Sep 2006
TELEDYNE SCIENTIFIC AND IMAGING LLC THOUSAND OAKS CA
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This report describes work performed in support of the program Investigation of Lattice and Thermal Stress in GaNAlGaN Field-Effect Transistors Contract No. N00014-05- C-0120 for the period 7106 - 93006. Our overall goal is to understand the role and contribution of residual stress and junction temperature on the degradation of AlGaNGaN HEMT electrical device characteristics. To execute this goal, electrical stress measurements will be performed on devices with varying residual stress, and under varying conditions. We plan to use the micro-Raman technique to monitor the evolution of residual stress in the active region of the device over time and under quiescent electrical bias. The question of whether a stress relaxation, potentially inducing dislocations, or simply changing the piezoelectric contribution to the 2DEG charge, contributes to device degradation will be investigated. We will seek to understand the influence of junction temperature on the magnitude of the stress at the active junction. The effect of physical, thermal, and electrical stress on device reliability will be investigated.
- Electrical and Electronic Equipment