Accession Number:

ADA455946

Title:

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

Descriptive Note:

Final rept. 22 Jun 2004-10 Mar 2006

Corporate Author:

DONGGUK UNIV SEOUL (KOREA)

Personal Author(s):

Report Date:

2006-03-10

Pagination or Media Count:

8.0

Abstract:

This work demonstrates realization of high-brightness and high-efficiency light emitting diodes LEDs using dislocation-free InGaNGaN SL Nano rods arrays NRAs by hydride vapor phase epitaxy HVPE. The benefits of the InGaNGaN supperlattice SL nanorod array NRA LEDs are examined in this work, and their characteristics are compared to those of conventional broad area BA LEDs.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Fluid Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE