Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)
Final rept. 22 Jun 2004-10 Mar 2006
DONGGUK UNIV SEOUL (KOREA)
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This work demonstrates realization of high-brightness and high-efficiency light emitting diodes LEDs using dislocation-free InGaNGaN SL Nano rods arrays NRAs by hydride vapor phase epitaxy HVPE. The benefits of the InGaNGaN supperlattice SL nanorod array NRA LEDs are examined in this work, and their characteristics are compared to those of conventional broad area BA LEDs.
- Electrooptical and Optoelectronic Devices
- Fluid Mechanics