Molecular Beam Epitaxy on Aligned Carbon Nanotube Arrays for Nanoelectronic Applications
Final rept. 5 Apr 2005-5 May 2006
SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF PHYSICS
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The result on molecular beam epitaxy of GaAs and AlGaAs using carbon nanotubes CNTs as a crystalline seed is reported. At the growth temperature T sub G or 600 C, GaAs wraps around CNTs forming wirelike configuration, while Al composites form dot-like formation. At T sub G 550 C, both GaAs and AlGaAs form dot-like droplets along CNTs. Raman and XRD show the dots and wires of III-arsenide on CNTs have well-defined crystalline structure. And, the results also are indicative that tangential phonon mode and inter-atomic spacing of CNTs are affected by the interfacing of CNTs and III-Vs.
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