Accession Number:

ADA455928

Title:

Molecular Beam Epitaxy on Aligned Carbon Nanotube Arrays for Nanoelectronic Applications

Descriptive Note:

Final rept. 5 Apr 2005-5 May 2006

Corporate Author:

SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF PHYSICS

Personal Author(s):

• Woo, Jong C.

Report Date:

2006-08-26

Pagination or Media Count:

11.0

Abstract:

The result on molecular beam epitaxy of GaAs and AlGaAs using carbon nanotubes CNTs as a crystalline seed is reported. At the growth temperature T sub G or 600 C, GaAs wraps around CNTs forming wirelike configuration, while Al composites form dot-like formation. At T sub G 550 C, both GaAs and AlGaAs form dot-like droplets along CNTs. Raman and XRD show the dots and wires of III-arsenide on CNTs have well-defined crystalline structure. And, the results also are indicative that tangential phonon mode and inter-atomic spacing of CNTs are affected by the interfacing of CNTs and III-Vs.

Descriptors:

• *GALLIUM ARSENIDES
• *ALUMINUM ARSENIDES
• *MOLECULAR BEAM EPITAXY
• *SEMICONDUCTING FILMS
• *CARBON NANOTUBES
• REPRINTS
• TEMPERATURE
• RAMAN SPECTROSCOPY
• SOUTH KOREA
• CATHODOLUMINESCENCE
• QUANTUM ELECTRONICS
• X RAY DIFFRACTION
• PHOTOLUMINESCENCE
• CRYSTAL STRUCTURE

Subject Categories:

• Electrical and Electronic Equipment
• Refractory Fibers
• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE