Electrically-Gated Ferromagnetism in Semiconductor Nanostructures
Final rept. 1 Sep 2002-31 Aug 2005
PENNSYLVANIA STATE UNIV UNIVERSITY PARK
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The aim of this project was to demonstrate the electrical gating of the magnetic response in magnetically-doped semiconductor nanostructures. The PI at Penn State Samarth developed a variety of different materials for this purpose using molecular beam epitaxy, and then worked in a close collaborative effort with the PI at Stanford Goldhaber-Gordon on magneto-transport measurements of these systems. The principal result was the demonstration of a new phenomenon an electrically-tunable anomalous Hall effect in magnetically-doped two-dimensional electron gases.
- Electrical and Electronic Equipment
- Magnetic and Electric Field Detection and Detectors
- Electricity and Magnetism