Accession Number:

ADA455813

Title:

Electrically-Gated Ferromagnetism in Semiconductor Nanostructures

Descriptive Note:

Final rept. 1 Sep 2002-31 Aug 2005

Corporate Author:

PENNSYLVANIA STATE UNIV UNIVERSITY PARK

Personal Author(s):

Report Date:

2006-02-01

Pagination or Media Count:

5.0

Abstract:

The aim of this project was to demonstrate the electrical gating of the magnetic response in magnetically-doped semiconductor nanostructures. The PI at Penn State Samarth developed a variety of different materials for this purpose using molecular beam epitaxy, and then worked in a close collaborative effort with the PI at Stanford Goldhaber-Gordon on magneto-transport measurements of these systems. The principal result was the demonstration of a new phenomenon an electrically-tunable anomalous Hall effect in magnetically-doped two-dimensional electron gases.

Subject Categories:

  • Electrical and Electronic Equipment
  • Magnetic and Electric Field Detection and Detectors
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE