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Accession Number:
ADA455752
Title:
Development of Heterostructure Materials for Thermoelectric Device Applications
Descriptive Note:
Final rept.
Corporate Author:
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Report Date:
2005-08-01
Pagination or Media Count:
17.0
Abstract:
A seed program was performed to establish directions for materials research in lead salt quantum dot superlattices. The objective is to define a program that could increase the ZT of quantum dot superlattices in the lead salt system, as well as move in a direction compatible with future DOD commercial access. This final report for the seed contract also acts as the main input into a proposal for future work, submitted in parallel. We propose that the future program will first concentrate on connecting microstructure to ZT performance, elucidating the structure-property relations for this system and leading to further optimization of the structure. The lead salt superlattices will be investigated in collaboration with MIT Lincoln Laboratories, where all film deposition will take place. As ZT is improved for thin film thermoelectrics, we will investigate depositing these structures on alternative substrates that will facilitate economic device fabrication. Of particular interest is the deposition of quantum dot superlattices on stainless steel, aluminum, and silicon substrates. Another issue in the anticipated scaling of thin film thermoelectrics is long term reliability. We will employ characterization techniques to study the stability of thin film thermoelectrics, including the potential use of in-situ TEM observations. Device work using new structures and substrates will be accomplished through collaboration with the Harman-Turner ONR project at Lincoln Laboratories. A successful research program will elucidate future paths for thermoelectric commercialization.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
