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Growth and Study of Novel 3-4 m Antimonide III-V Diode Lasers Operating at Room Temperature (Hole Well Laser)
Final rept. 1 May 2005-1 May 2006
MONTPELLIER UNIV (FRANCE)
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This report results from a contract tasking University Montpellier 2 as follows The objectives of this effort are to demonstrate an electrically injected Hole Well HoW Laser in the 3-4 m wavelength range and to obtain continuous wave operation and a high output power 100mW above room temperature. The tasks will be 1. Laser design Simulation of the structure to optimize alloy compositions and the thicknesses of the GaInSb QWs and GaInAsSb barriers in order to achieve an emission between 3 and 4 m. 2. Growth of the HOW-Laser active zone Optimisation of growth conditions to achieve intended compositions and thicknesses, abrupt interfaces and high quality materials that are suitable for devices. RHEED and double-crystal x-ray diffractometry will be performed. 3. Characterization of the HOW-Laser active zone Optical characterization, including optical transmission, photoluminescence and electroluminescence studies will be done to determine the band gap of the constituent alloys. Measurements of luminescence efficiency, and the variation of photoluminescence spectra with temperature and optical power. Electrical measurements to evaluate electrical transport in the active region. 4. Growth and study of HoWLaser diode in the 3-4 m wavelength range. Doped heterostructures for diode HOW-Laser. 5. Characterization of HoW-Laser diode Complete laser characterization including power, efficiency, and beam quality.
APPROVED FOR PUBLIC RELEASE