DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates
Final rept. 17 Jan 2005-17 May 2006
RADBOUD UNIV NIJMEGEN (NETHERLANDS)
Pagination or Media Count:
This report results from a contract tasking Radboud University Nijmegen as follows The Grantee will investigate the removal of dislocations from the GaN epitaxial layer by defect-selective etching technique and comparing properties of the as-grown i.e. containing dislocations and dislocation-free material. This approach will allow electrical or optical measurements on the epitaxial layers with and without dislocations. The influence of dislocations on the measured material properties will also be assessed.
APPROVED FOR PUBLIC RELEASE