Accession Number:

ADA455284

Title:

MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates

Descriptive Note:

Final rept. 17 Jan 2005-17 May 2006

Corporate Author:

RADBOUD UNIV NIJMEGEN (NETHERLANDS)

Personal Author(s):

• Weyher, Jan L.

Report Date:

2005-06-10

Pagination or Media Count:

9.0

Abstract:

This report results from a contract tasking Radboud University Nijmegen as follows The Grantee will investigate the removal of dislocations from the GaN epitaxial layer by defect-selective etching technique and comparing properties of the as-grown i.e. containing dislocations and dislocation-free material. This approach will allow electrical or optical measurements on the epitaxial layers with and without dislocations. The influence of dislocations on the measured material properties will also be assessed.

Descriptors:

• *EPITAXIAL GROWTH
• *ETCHING
• *GALLIUM NITRIDES
• OPTICS
• DISLOCATIONS
• ELECTRICAL MEASUREMENT
• N TYPE SEMICONDUCTORS
• SUBSTRATES
• NETHERLANDS

Subject Categories:

• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE