Accession Number:

ADA454504

Title:

Growth and Characterization of Large Diameter CdNzTe Crystals

Descriptive Note:

Final rept. May 2005-May 2006

Corporate Author:

CHARLES UNIV PRAGUE (CZECH REPUBLIC) INST OF PHYSICS

Personal Author(s):

Report Date:

2006-05-01

Pagination or Media Count:

27.0

Abstract:

The report summarizes the activities during the whole contract period. Parts of the results were presented in Progress Reports No. 1 and 2 and will not be repeated in detail. The goal of the effort was aimed to test the middle-pressure setup after completion and modification. Several boules were grown, wafers with dimensions 10x10 sq mm were fabricated and delivered to NVESD. New wafers with dimensions 10x10 sq mm and 20x20 sq mm are delivered in parallel to this report. As was reported in Progress Report No. 2 additional annealing approach has been developed in order to decrease the size of inclusions to the size acceptable for MBE growth for cases, where inclusion formation was not suppressed during the growth. The main goal was to look for such annealing conditions, when inclusion size and density is decreased and the crystal microstructure is not damaged during the annealing process. A future outlook based on the results of a longer-term effort in CZT growth and substrate fabrication in the Institute of Physics, Charles University in Prague is presented.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE