Research and Development of Silicon Carbide (SiC) Avalanche Sharpeners for Picosecond Range, High Power Switches
Final rept. 15 Jul 2004-5 Jan 2006
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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This report results from a contract tasking loffe Institute as follows The Grantee will develop, fabricate, test, and characterize 4H-SiC power semiconductor switches operating in picosecond range of switch time. Special 4H-SiC multi-layered junction structures, such as diode structures pnn-type and triode structures pnp- and npn-type will be fabricated and tested as avalanche sharpeners.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Electricity and Magnetism