Accession Number:

ADA446742

Title:

Research and Development of Silicon Carbide (SiC) Avalanche Sharpeners for Picosecond Range, High Power Switches

Descriptive Note:

Final rept. 15 Jul 2004-5 Jan 2006

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Personal Author(s):

Report Date:

2005-12-20

Pagination or Media Count:

19.0

Abstract:

This report results from a contract tasking loffe Institute as follows The Grantee will develop, fabricate, test, and characterize 4H-SiC power semiconductor switches operating in picosecond range of switch time. Special 4H-SiC multi-layered junction structures, such as diode structures pnn-type and triode structures pnp- and npn-type will be fabricated and tested as avalanche sharpeners.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE