Accession Number:

ADA446329

Title:

SiC Thin Films on Insulating Substrates for Robust Microelectromechanical System (MEMS) Applications

Descriptive Note:

Final rept. 14 Sep 1998-13 Aug 2003

Corporate Author:

CINCINNATI UNIV OH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

2003-11-01

Pagination or Media Count:

170.0

Abstract:

An increasing demand for robust MEMS devices, such as micro-sensors, that can operate at temperatures well above 300 deg C and often in severe environments has stimulated the search for alternatives to Si. 1 The research in direct formation of SiC thin-films on insulating substrates SiCOI has found a very promising technology for producing SiC device structures and providing an excellent alternative material solution for high temperature applications. MEMS applications require that large area of uniform SiC films is formed on insulating substrates or sacrificial layers 2, 3 such as Si3N4, SiO2, polycrystalline Si poly-Si, glass, quartz and sapphire substrates. The growth of highly uniform SiC films with a highly stable and impermeable thin-film structure as well as a smooth interface of SiC-substrate is the essential step in producing a MEMS device with the required long-term stability. The major portion of this study was devoted to optimize the SiC growth conditions for different device applications.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics
  • Industrial Chemistry and Chemical Processing

Distribution Statement:

APPROVED FOR PUBLIC RELEASE