A Latching Capacitive RF MEMS Switch in a Thin Film Package (Preprint)
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIRECTORATE
Pagination or Media Count:
A latching capacitive RF MEMS switch has been successfully designed, fabricated and tested. The switch uses a long thin metal cantilever which is electrostatically held to an upper electrode at the free end and to a lower electrode at the beam root end forming an S-shaped actuator. The upper electrode sits on top of a thin dielectric shell which also serves as part of the package for the device. Slight dielectric charging holds the cantilever in either the on- or off-state between switching pulses. In the latched states with no bias, insertion loss is 0.2 dB at 10 GHz and isolation is 20 dB in a narrow band around 10 GHz. Repeatable switching has been demonstrated for actuation voltages below 20 V. Hot-switched power handling has been tested up to 6 W at 10 GHz without failure.
- Electrical and Electronic Equipment
- Radiofrequency Wave Propagation