Development of a Large-Format Science-Grade CMOS Active Pixel Sensor, for Extreme Ultra Violet Spectroscopy and Imaging in Space Science
RUTHERFORD AND APPLETON LABS CHILTON (UNITED KINGDOM)
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We describe our programme to develop a large-format science-grade CMOS active pixel sensor for future space science missions, and in particular an extreme ultra-violet spectrograph for solar physics studies on ESAs Solar Orbiter. Our route to EUV sensitivity relies on adapting the back-thinning and rear-illumination techniques first developed for CCD sensors. So far we have designed and tested a 4k x 3k 5-micrometer pixel sensor fabricated on a 0.25-micrometer CMOS imager process. Wafer samples of these sensors have been thinned by e2v technologies with the aim of obtaining good sensitivity at EUV wavelengths. We present our results to date, and plans for a new sensor of 2k x 2k 10-micrometer pixels to be fabricated on a 0.35-micrometer CMOS process.
- Solid State Physics
- Atomic and Molecular Physics and Spectroscopy
- Unmanned Spacecraft