Femtosecond Laser Machining of Gallium Arsenide Wafers for the Creation of Quasi-Phasematched Devices
Final rept. 20 Sep 2004-2005
HERIOT-WATT UNIV EDINBURGH (UNITED KINGDOM)
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This report results from a contract tasking Heriot-Watt University as follows The project will use femtosecond laser machining to create comb-like micro-structures from GaAs wafers that can be combined to produce a suitably oriented pattern for QPM. Readily available GaAs wafers will be used and the study will concentrate on evaluating a the quality of femtosecond machining possible in GaAs in terms of its repeatability precision and surface finish b the feasibility of aligning two GaAs combs in intimate optical contact c the transmission loss of the composite sample and d second-harmonic generation for a 2.3 micrometer input wavelength from an existing OPO source. The project will utilize a pound250k amplified Tisapphire laser that has been recently commissioned at Heriot-Watt University. An existing 2.3 micrometer modelocked OPO will be used for optical testing purposes. Funding is requested for GaAs wafers optics a contribution to research technical staff time and an optical alignment system to permit precise contacting of the GaAs combs. Derryck Reid is the principal investigator, Dr Reid will be supported by a PhD student Mr Stuart Campbell who holds a BSc Heriot-Watt University and an MSc in Optoelectronics St Andrews University and by a research assistant Mr Euan Ramsay M.Phys., St Andrews University.
- Lasers and Masers