Accession Number:

ADA445705

Title:

Real-time Optical Control of Ga(1-x)In(x)P Film Growth

Descriptive Note:

Research rept.

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Personal Author(s):

Report Date:

1999-08-01

Pagination or Media Count:

10.0

Abstract:

This paper describes results on open- and closed-loop controlled growth of epitaxial GaPGa1-xInxP heterostructures on Si001 substrates. The layers are grown in a low pressure pulsed chemical beam epitaxy PCBE reactor utilizing real time optical p-polarized reflectance PRS probing. The results of the implemented closed loop controlled growth favorably compare to the films grown using pre-designed source injection profiles based on an experimental data base.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE