Accession Number:

ADA445370

Title:

Terahertz Radiation Emitters from Narrow-Gap Semiconductors

Descriptive Note:

Final rept. 1 Jun 2004-25 Aug 2005

Corporate Author:

SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)

Personal Author(s):

Report Date:

2005-01-01

Pagination or Media Count:

39.0

Abstract:

This report results from a contract tasking Semiconductor Physics Institute as follows The grantee will investigate optimizing material parameters of low-temperature grown GaAs for efficient THz emitters and detectors.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE