Terahertz Radiation Emitters from Narrow-Gap Semiconductors
Final rept. 1 Jun 2004-25 Aug 2005
SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)
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This report results from a contract tasking Semiconductor Physics Institute as follows The grantee will investigate optimizing material parameters of low-temperature grown GaAs for efficient THz emitters and detectors.
- Solid State Physics