Accession Number:

ADA445291

Title:

Porous Semiconductor Growth

Descriptive Note:

Final rept. 1 Nov 2003-28 Dec 2005

Corporate Author:

QUEEN MARY COLL LONDON (UNITED KINGDOM) DEPT OF MATERIALS

Personal Author(s):

• Ray, Asim K.

Report Date:

2004-12-14

Pagination or Media Count:

17.0

Abstract:

This report results from a contract tasking Queen Mary University of London as follows The Grantee will investigate fabrication and analysis of Cadmium Sulphide CdS nanowires grown by depositing CdS nanoparticles in porous silicon and alumina.

Descriptors:

• *GROWTH(GENERAL)
• *SEMICONDUCTORS
• *POROUS MATERIALS
• FABRICATION
• CADMIUM SULFIDES
• UNITED KINGDOM
• QUANTUM DOTS

Subject Categories:

• Electrical and Electronic Equipment
• Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE