Accession Number:

ADA443645

Title:

Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties

Descriptive Note:

Final rept. 24 Sep 2001-30 Apr 2003

Corporate Author:

MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING

Personal Author(s):

Report Date:

2005-08-01

Pagination or Media Count:

126.0

Abstract:

Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE