Accession Number:

ADA443389

Title:

Thermal Modeling of GaN HEMTs on Sapphire and Diamond

Descriptive Note:

Master's thesis

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s):

Report Date:

2005-12-01

Pagination or Media Count:

71.0

Abstract:

Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride GaN High Electron Mobility Transistors HEMTs are on the leading edge of wide bandgap technology and have the performance characteristics to dominate in high power - high bandwidth applications. The Defense Advanced Research Projects Agency DARPA, Office of Naval Research ONR and Missile Defense Agency MDA are all sponsoring research projects to apply wide bandgap technology. This thesis studies the effects of changing the substrate material of an existing GaN HEMT from sapphire to diamond through the use of commercially available Silvaco software for modeling and simulation. The unparalleled thermal properties of diamond are expected to dramatically decrease device temperatures and increase component lifetimes and reliability.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE