Accession Number:

ADA443082

Title:

Development of Passivation Technology for Improved GaN/AlGaN HEMT Performance and Reliability

Descriptive Note:

Final technical rept. Aug 2002-Sep 2005

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

2005-09-01

Pagination or Media Count:

80.0

Abstract:

Under the support of this contract, we have been successful in mitigating the current collapse that is found in nitride based high electron mobility transistors HEMTs that is responsible for low power performance from these devices. We have successfully and repeatedly grown oxide material that, along with surface cleaning recipes, reduce the surface states and reduce the device-device surface leakage. As part of the recipe development we have studied fundamental characteristics of the native oxides on GaN and AlGaN surfaces using XPS and compared the results to oxides generated by exposure to UV ozone, We have developed a lattice matched oxide, magnesium calcium oxide M8CaO, and deposition recipe that provides for the lowest level of surface traps and thus the highest level of surface passivation. Along with this oxide, we have shown that a thin layer of scandium oxide Sc203, approximately Sam thick, is sufficient for protection of environmental degradation of the MgCaO in environments of 100 humidity and elevated temperatures. This oxidenitride interface is also able to withstand the processing temperatures of the nitride based HEMTs.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE