Accession Number:

ADA440925

Title:

Summary of Inductive SiC BJT Switching

Descriptive Note:

Summary rept. Oct 2004-Jul 2005

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Personal Author(s):

Report Date:

2005-11-01

Pagination or Media Count:

18.0

Abstract:

Significant development of silicon carbide SiC for device applications allows its uniquely favorable properties to be exploited in circuit designs. The 4H-SiC structure has several characteristics that provide optimal speed and power handling. These include wide bandgap 3 cV, high dielectric breakdown 3.5 MVcm, and high thermal conductivity 5 Wcm-K 1. By combining these properties, SiC bipolar junction transistors can achieve fast switching at high voltages 1.2 kV. New generation devices are also being developed with increased current handling capability above 10 A. However, in order to meet the power handling requirements of FCS systems, such as hybrid-electric vehicle HEV power conditioning, it is necessary to configure these devices in parallel and validate their operation at high temperatures package temperatures of 90 degrees C, and junction temperatures to over 150 degrees C. This report documents experimental characterization of SiC BJTs fabricated by CREE in various applications, including parallel switching. The results presented here indicate that SiC is well suited to meet these goals.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE