Wavefunction Engineering of Individual Donors for Silicon-Based Quantum Computers
Final rept. 20 Feb 2001-30 Jun 2005
ILLINOIS UNIV CHAMPAIGN
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This project has explored possibilities for realizing a Kane-type quantum computer based on SiP donor qubits. The overall goal has been to create an integrated process based on STM patterning of individual P-donor qubits, combined with single-electron transistors SETs for singlet-triplet spin state detection in the same lithographic step. The main accomplishments during this period have been to 1 develop processes for positioning P atom donors and self-ordered arrays with near-atomic accuracy inside the silicon crystal lattice, 2 fabricate P donor nanowires as a major step toward an integrated epitaxial single-electron transistor, 3 measure electrical characteristics of the unpatterned P delta-layer and P donor nanowires, 4 compare the electrical data with our band structure calculations on the P delta-layer and previous theories of weak localization, 5 propose a new Kane-type architecture employing the idea of universal exchange based on composite 3-electron spin qubits, and 6 perform extensive simulations to confirm the fundamental aspects of this approach, and quantify major difficulties to be overcome. Sustained effort in these directions will be required to realize a working qubit.
- Electrical and Electronic Equipment