Empirical Pseudopotential Modeling of Antimonide-Based III-V Structures
Final rept. Nov 2002-Nov 2004
UNIVERSITA DI MODENA E REGGIO EMILIA (ITALY) DIPARTIMENTO DI FISICA
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This report results from a contract tasking National Institute for the Physics of Matter INFM as follows The contractor will make a detailed comparison of the conventional Empirical Pseudopotential Model EPM with the Superlattice Empirical Pseudopotential Model SEPM developed at AFRL, by comparing the predictions of the two methods for the transition energies in a number of well characterized and microscopically controlled InAsGaSb Type-II superlattice samples. The comparison between the two different implementations of the empirical pseudopotential method and with the experiment will lead to a better understanding of the role of the transition energies and dipole matrix elements of the interface bonds in the no-common-atom InAsGaSb superlattices and how they can be adequately described by the theory. This is a necessary step in the direction of making the EPM a reliable tool for analyzing and predicting behavior and performances of the devices based on antimonide III-V semiconductors.
- Solid State Physics
- Inorganic Chemistry