Accession Number:

ADA429770

Title:

New Lanthanide Precursors for Doping Semiconductor Films

Descriptive Note:

Final rept. 1 May 2001-31 Oct 2004

Corporate Author:

WAYNE STATE UNIV DETROIT MI DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

2004-12-22

Pagination or Media Count:

8.0

Abstract:

The goal of this proposal was to synthesize new lanthanide and other source compounds for use in chemical vapor deposition and related processes using molecular precursors and to evaluate these compounds in materials growth processes. Specific objectives included the synthesis and characterization of lanthanide complexes that can be used to dope nitride and sulfide materials, materials growth using these precursors, and the synthesis and characterization of volatile, multimetallic first row transition metal complexes that can be used for as dopant precursors for magnetic semiconductor materials such as GaNMn or GaNCr. In addition, several new classes of potential film growth precursors for the group 2 elements magnesium, calcium, strontium, and barium were developed.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE