Accession Number:

ADA429220

Title:

A New Type of Silicon Superlattice: Hetero-Epilattice

Descriptive Note:

Final rept. 15 Jul 1998-31 Jan 2003

Corporate Author:

NORTH CAROLINA UNIV AT CHARLOTTE

Personal Author(s):

Report Date:

2003-05-27

Pagination or Media Count:

11.0

Abstract:

This paper introduces a new type of superlattice, consisting of a semiconductor such as silicon sandwiched between adsorbed oxygen atoms. Compared to heterojunction quantum structures, this type of superlattice allows a wider variety of man-made solid because of tolerance to interfacial strain. Experimentally, SiO superlattice is epitaxial with defect density below 10exp 9sq cm. A 9-period structure shows electroluminescence with a peak at 2.2eV, and an effective barrier height of more than 0.5eV. Early on in this project, HRTEM has been exclusively used to demonstrate the epitaxy beyond the monolayer of oxygen introduced. A year ago, superlattice structure in the strain pattern demonstrated the extent of the interfacial strain, being at least four lattice dimension. This is a very important finding because researchers may now use the Semiconductor-Atomic Superlattice SAS as a matching section for the epitaxial growth of one with large strain onto the other. A frequently asked question is as follows Do the oxygen atoms cover the entire 1 x 2 site If not, is there staggering present Unfortunately, the answers to these questions may require in-situ STM probing, which may be something for future consideration. Technologically, this research opens the door for future 3D ICs. A list of 17 publications related to this research is included. 10 figures, 17 refs.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE