High-Efficiency Silicon Carbide (SiC) Converters. Delivery Order 0001: Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide
Final rept. 15 May 2001-18 May 2002
MISSISSIPPI STATE UNIV MISSISSIPPI STATE CENTER FOR ADVANCED SEMICONDUCTOR PROTOTYPING
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A design based on a self- aligned, gate-implanted, trenched source-gate junction FET was selected for its near term technological readiness and its long term manufacturability. This project concentrated on several key processes required for the realization of a viable VJFET fabrication technology, namely, 1 Development of silicon carbide dry plasma etches 2 Development of appropriate edge termination technology and 3 Development of implantation and annealing recipes core to the design. Semiconductor devices, principally the Schottky barrier diode and the PiN junction rectifier, were fabricated to test design assumptions and to evaluate new process steps. The principal accomplishments of the effort can be summarized as follows 1 The completion of a design for a 600-V self-aligned, gate-implanted, trench VJFET, shown to deliver blocking voltages in excess of 800 V, an specific on resistance as low as 5 mohm-cm2 2 The development of critical VJFET and rectifier device fabrication processes, and 3 The demonstration of a multi-wafer PiN diode lot of 1.5 kV PiN diodes.
- Inorganic Chemistry
- Electrical and Electronic Equipment