Accession Number:

ADA426456

Title:

Investigation of Quantum Dot Lasers

Descriptive Note:

Final rept. 1 Mar 2001-31 May 2004

Corporate Author:

MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

2004-08-09

Pagination or Media Count:

17.0

Abstract:

Since the first demonstration of room-temperature operation of self-assembled quantum dot QD lasers about a decade ago, there have been great strides in improving the characteristics and performance of these lasers. They currently match or surpass the performance of quantum well lasers. However, there are unique problems that limit the performance of conventional separate confinement heterostructure SCH QD lasers compared to what is expected from ideal lasers with near singular density of states. In the study reported here, unique insights and solutions to these problems are demonstrated and reliable quantum dot lasers that surpass quantum well lasers in performance characteristics are developed. By utilizing the concepts of tunnel injection and p-doping, 1.0 micrometer and 1.3 micrometer quantum dot lasers with high differential gain, modulation bandwidth 25GHz, a factor less than unity, and zero chirp have been achieved. This final report summarizes the successful design, fabrication, and characterization of high performance 1.0 micrometer QD-Distributed-Feedback DFB lasers, 1.0 micrometer QD-Tunnel-Injection lasers undoped and p-doped, and 1.3 micrometer p-doped QD lasers. The authors have demonstrated record performance of these unique devices in terms of differential gain, modulation bandwidth, temperature dependence, chirp, and linewidth enhancement factor. 16 figures, 14 refs.

Subject Categories:

  • Lasers and Masers
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE