Fast Detection of High Power Microwave Signals using a Asymmetrically Shaped Semiconductor Structures
Final rept. 10 Jan 2003-21 Jun 2004
SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)
Pagination or Media Count:
This report results from a contract tasking Semiconductor Physics Institute as follows The contractor will investigate methods of creating a fast detector of high power microwave radiation that can measure the amplitude of the pulses of nanoseconds duration in the order of 100 kW. The contractors investigation will include 1. Detection properties of asymmetrically shaped semiconductor structure, fabricated on the base of silicon single crystal 2. Suitability of the device to detect high power microwave signals using asymmetrically shaped AlGaAs structures. The contractor will deliver 12 asymmetrically shaped sensors to Dr John Gaudet, AFRLDE, Bldg 909, 3550 Aberdeen Ave SE, Kirtland AFB NM 87117-5776.
- Radiofrequency Wave Propagation