Advancement of Polymer Detectors for Space Applications
Final technical rept. Sep 2002-Mar 2004
INTERNATIONAL PHOTONICS CONSULTANTS INCPAGOSA SPRINGS CO
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Photovoltaic polymer detectors incorporating Indium Phosphide InP and Cadmiume Selenide CdSe quantum dots QDs were fabricated, characterized for their open circuit voltage and short circuit currents and studied for radiation resistance. InP QD detectors exhibited higher photovoltages and responded further into the near-IR compared to CdSe QD detectors, however, the CdSe QD detectors exhibited higher external quantum efficiencies than InP QD detectors. InP QD detectors showed excellent resistance to gamma-ray and 25.6 MeV protons at a total dose of 150 kradsi, while CdSe QD PPDs irradiated by gamma-rays to 152 krad Si damaged more from environmentally-induced aging effects than by ionization-induced processes. The data suggest that both InP and CdSe QD polymer detectors have excellent resistance to irradiation since strong carrier confinement and lifetimes inherent in QDs reduce the interaction with native defect and nuclear caused dislocations compared to conventional quantum well detectors where carriers have greater mobility and can interact freely with recombination centers.
- Electrooptical and Optoelectronic Devices
- Quantum Theory and Relativity