Uncooled RF Electronics for Airborne Radar
Final technical rept. 15 Oct 1999-30 Nov 2002
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Improvements to the AlGaNGaN HEMT device technology was studied at the epitaxial level by MOCVD, aimed at enhancing efficiency and linearity. A number of projects were performed under the program, including reducing the contact resistance, introducing a type of contacts that permits very short access regions, introducing hot electron launching into the channel, and double channel structures. Basic research in support of these projects was also performed, including studies of non-planar selective area growth, polarization effects in AlGaNCaN heterostructures, and doping of GaN with Fe and oxygen.
- Electrical and Electronic Equipment