Accession Number:

ADA422739

Title:

Uncooled RF Electronics for Airborne Radar

Descriptive Note:

Final technical rept. 15 Oct 1999-30 Nov 2002

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

2003-08-01

Pagination or Media Count:

13.0

Abstract:

Improvements to the AlGaNGaN HEMT device technology was studied at the epitaxial level by MOCVD, aimed at enhancing efficiency and linearity. A number of projects were performed under the program, including reducing the contact resistance, introducing a type of contacts that permits very short access regions, introducing hot electron launching into the channel, and double channel structures. Basic research in support of these projects was also performed, including studies of non-planar selective area growth, polarization effects in AlGaNCaN heterostructures, and doping of GaN with Fe and oxygen.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE