Optical Processes in High-Q Semiconductor Microcavities
Final rept. 12 Jun2000-31 Dec 2003
OREGON UNIV EUGENE DEPT OF PHYSICS
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This final progress report summarizes research efforts in two areas cavity QED of quantum dots and electromagnetically induced transparency EIT in GaAs quantum wells. Cavity QED studies are based on the development of a composite nanocrystal-microsphere system, in which CdSeZnS coreshell nanocrystals couple to whispering gallery modes WGMs in a fused silica microsphere. The composite microcavity system can feature a Q-factor as high as 108 and a nanocrystal decoherence rate as small as 3 microneV 0.75 GHz, indicating that the composite system can in principle reach the strong coupling regime of cavity QED. EIT studies have exploited the use of Coulomb interactions between excitons to induce and manipulate exciton spin coherence and biexciton coherence. These studies have led to the first experimental demonstration of EIT in inter-band optical transitions in semiconductors in A-type, cascaded, and V-type three-level systems.
- Quantum Theory and Relativity