Accession Number:

ADA422632

Title:

AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor

Descriptive Note:

Final rept.

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH RESEARCH ADMINISTRATION AND SPONSORED PROGRAMS SERVICES

Personal Author(s):

Report Date:

2003-11-01

Pagination or Media Count:

7.0

Abstract:

The goal of the proposed work is to investigate the potential advantages of the InGaN channel as a host of the 2DEG and to address the material related problems facing this ternary alloy in the AlGaNInGaN MODFET structure. The impact on addressing these materials issues on the AlGaNInGaN MODFET device performance will be systematically investigated and compared with the corresponding GaN 2DEG. There are several issues that were investigated, that are related to the properties of InGaN and AlGaInN material systems. These properties are concerned with the strain and its effects on the band structure, recombination process, band offset and piezoelectric fields and 2DEG.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE