Shot Noise in Negative-Differential-Conductance Devices
STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS AND ASTRONOMY
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The authors have compared the shot-noise properties at T 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance NDC in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2 eI in the NDC region, that of the latter device remained 2 eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.
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