Accession Number:

ADA422261

Title:

Shot Noise in Negative-Differential-Conductance Devices

Descriptive Note:

Journal article

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK DEPT OF PHYSICS AND ASTRONOMY

Report Date:

2003-10-31

Pagination or Media Count:

4.0

Abstract:

The authors have compared the shot-noise properties at T 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance NDC in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2 eI in the NDC region, that of the latter device remained 2 eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE