Accession Number:

ADA416635

Title:

A Study of Mid-IR Laser Active Regions

Descriptive Note:

Final rept. 1 Aug 2000-31 Dec 2002

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE OFFICE OF THE VICE PROVOST FOR RESEARCH

Personal Author(s):

Report Date:

2003-05-01

Pagination or Media Count:

32.0

Abstract:

We investigated the formation of InAsSb three dimensional growth on GaSb substrates Experiments were conducted as a function of the As pressure and monolayer coverage. We also explored the band offsets in the Ga1-xInxSbGaSb heterojunctions as a function of the InSb alloy concentration, x Experiments consisted of growth of a series of strained quantum wells SQWs where the alloy concentration, x and thickness, d of the quantum wells were varied X-ray analysis was used to determine the composition and thickness and to monitor the onset of relaxation. We have grown single quantum wells of strained Ga1-xInxSb x0.35 embedded in GaSb by molecular beam epitaxy to investigate the photoluminescence and the band offset of this heterojunction. The photoluminescence shifts to longer wavelengths when the well thickness, or the indium content x, is increased The band offsets of these heterojunctions are estimated by fitting the photoluminescence data to a single quantum well model Our offset estimates support the theoretical prediction by first principle calculations for these strained heterojunctions.

Subject Categories:

  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE