Plasma-Processing of Device-Quality GaN and Other Group III-Nitride-Dielectric Interfaces for Advanced Device Applications
Technical rept. 1 Apr 2000-31 Mar 2003
NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS
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The research performed under this grant was focused on two aspects of GaN-dielectric interfaces 1 the development of remote plasma processing to yield device quality interfaces suitable for applications including metal oxide semiconductor MOS devices, as well surface passivation for high electron mobility transistor HEMT devices, and 2 determination of band offset energies between GaN and dielectrics including silicon dioxide SiO2, silicon nitride Si3N4 and a representative high-k alternative dielectric, hafnium oxide HfO2. Considerable progress was made in each of these areas, and the research has been documented in numerous publications. In particular, a low temperature 300 deg C remote plasma processing sequence was developed which minimized interfacial traps dsub it, and identified the importance of self-organized gallium suboxide, GaOx, x1.5 interfacial layers. Conduction band offset energies between GaN and the representative dielectrics studied were adequate for MOS and surface passivation applications. The critical nature of the self-organized GaOx layer was verified by showing that interfaces with thicker layers, approx. 1.5 nm as contrasted with appro. 0.8 nm, yielded increased densities of interfacial defects, attributed to the inability balance bond and macroscopic strain.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Plasma Physics and Magnetohydrodynamics